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Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers

Abstract : This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers with different P contents have been prepared by coevaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography. It is found that P incorporation modifies the mechanism of Si-NC growth by promoting the phase separation during the postgrowth-annealing step, leading to nanocrystals formation at lower annealing temperatures as Page 38 of 72 Nanoscale compared to undoped Si-NCs. Hence, the maximum of Si-NC related photoluminescence (PL) intensity is achieved for annealing temperatures lower than 900 °C. It is also demonstrated that the Si-NCs mean size increases in the presence of P, which is accompanied by a redshift of the Si-NC related emission. The influence of the phosphorus content on the PL properties is studied using both room temperature and low temperature measurements. It is shown that for a P content lower than about 0.1 at. %, P atoms contribute to significantly improve the PL intensity. This effect is attributed to the P-induced-reduction of the number of non-radiative defects at the interface between Si-NCs and SiO 2 matrix, which is discussed in comparison with hydrogen passivation of Si-NCs. In contrast, for increasing P contents, the PL intensity strongly decreases, which is explained by the growth of Si-NCs reaching sizes that are too large to ensure quantum confinement and to the localization of P atoms inside Si-NCs.
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Contributor : Xavier Devaux Connect in order to contact the contributor
Submitted on : Tuesday, November 30, 2021 - 2:26:30 PM
Last modification on : Tuesday, January 4, 2022 - 5:54:52 AM


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Fatme Trad, Alaa Giba, Xavier Devaux, Mathieu Stoffel, Denis Zhigunov, et al.. Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers. Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩. ⟨hal-03457250⟩



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